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n‑Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives

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Figshare2019-04-23 更新2026-04-29 收录
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https://figshare.com/articles/dataset/n_Type_Organic_Field-Effect_Transistors_Based_on_Bisthienoisatin_Derivatives/8026709
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Bisthienoisatins (BTI-R with R = n-propyl, n-hexyl, and 2-ethylhexyl) and the dicyanomethylene derivatives (BTICN-R) are prepared, and the thin-film transistors are investigated. The crystals have uniform stacking structures, but the packing pattern of the stacks varies depending on the alkyl chains. These materials show n-type transistor properties, and BTICNs exhibit greater performance than BTIs in general. In particular, BTICN-EH shows the maximum electron mobility exceeding 0.2 cm2 V–1 s–1.
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2019-04-23
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