OX05

B2FIND2026-04-25 收录

功率半导体可靠性

宇宙辐射

数据链接：

https://b2find.eudat.eu/dataset/2d9cb583-bd03-5c77-ac63-235c28d7a417 数据链接链接失效反馈

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资源简介：

High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon...

Data underlying the PhD dissertation 'Prognostics and Thermal Management of Power Electronic Packages'

功率半导体可靠性

电子封装热管理

The reliability of power electronic packages is often compromised by degradation mechanisms such as thermal fatigue and delamination, leading to economic consequences due to premature failures. Conven

DataCite Commons2024-10-31 更新70

ChipIR Commercial Access Infineon OX10 - week37/2019

功率半导体可靠性

辐射效应

High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence,

DataCite Commons2020-07-29 更新60

figshare_Masoumeh.zip

天文学

宇宙辐射

Simulated surface brightness maps for M51-, N6946-, M33-like galaxies with the SKA-1MID UDT-noise sky level at the observed frequency of 1.4 GHz for case 1 and case 2, thermal and nonthermal emissions

DataCite Commons2022-08-17 更新40

Data from Modelling cosmic radiation events in the tree-ring radiocarbon record

宇宙辐射

放射性碳测年

Each posterior corner plot is available in full resolution as a .pdf, named DATE.pdf for each event date.

DataCite Commons2022-10-21 更新60

Improved Prediction Model of Ion-Induced Worst-Case Response in Power Devices

单粒子效应

功率半导体可靠性

This study investigates the worst-case Single-Event Effect (SEE) response in semiconductorpower devices induced by energetic ions. An existing predictive model is refined and extended to potentiallyco

IEEE50

OX05

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