Ballistic spin transistor in graphene via spin-dependent electron optics

A series of comma separated value (.csv) files containing all experimental data used for our manuscript titled "Ballistic spin transistor in graphene via spin-dependent electron optics". Files are named according to the FIgures they correspond to. Note that all data shown in Figure 3 comes from the same files as the data shown in Figure 2a.

Each file has two header rows: 

Column name 

Column units

Explanation of column names:

"V_sweep_x" = Column 1 is always the parameter being swept during the measurement (units of instrument x).

"SR830_x_ip" = Lock-in amplifier (labelled x) in-phase channel (units of Volts). Typically used to measure resistances across the device.

"SR830_x_oop" = Lock-in amplifier (labelled x) out-of-phase channel (units of Volts). Typically used to measure resistances across the device.

"2636A_smux_v" = Source-Meter channel "x" voltage reading (units of Volts). Typically used to apply voltages to the back gate or to magnet power supply. 

"2636A_smux_i" = Source-Meter channel "x" current reading (units of Amperes). Typically used to apply voltages to the back gate or to magnet power supply. 

Device resistances are measured using the lock-in amplifier with an output voltage of 1-5 V, applied across a 1 MOhm limiting resistance, implying an excitation current of 1-5 uA in most experiments. All signals measured by lock-in amplifiers are subject to a 10x pre-amplifier. Resistance can be calculated from the in-phase channel of the lock-in amplifier using Ohms law with the above considerations: R = V/(10*I). From this, all other parameters (resistivity, conductivity, mobility, mean free path etc.) are derived, as explained in the manuscript and supplementary information.

Magnetic field strength is calculated using the source meter voltage column (either channel a or b), in the polynomial equations supplied in file "Electromagnet_Polynomials".