Data from: Current-induced switching of a van der Waals ferromagnet at room temperature

The recent discovery of emergent magnetism in van der Waals magnetic
materials (vdWMM) has broadened the material space for developing
spintronic devices for energy-efficient computation. While there has been
appreciable progress in vdWMM discovery, a solution for non-volatile,
deterministic switching of vdWMMs at room temperature has been missing,
limiting the prospects of their adoption into commercial spintronic
devices. Here, we report the first demonstration of current-controlled
non-volatile, deterministic magnetization switching in a vdW magnetic
material at room temperature. We have achieved spin-orbit torque (SOT)
switching of the PMA vdW ferromagnet Fe3GaTe2 using a Pt spin-Hall layer
up to 320 K, with a threshold switching current density as low as JSW =
1.69 × 106 A cm-2 at room temperature. We have also
quantitatively estimated the anti-damping-like SOT efficiency of our
Fe3GaTe2/Pt bilayer system to be ξDL = 0.093, using the second harmonic
Hall voltage measurement technique. These results mark a crucial step in
making vdW magnetic materials a viable choice for the development of
scalable, energy-efficient spintronic devices.