Mean values for the parameters defining simulated 5-gates devices: Height of the potential profile (<i>V</i><sub>0</sub>) at the gate position (<i>x</i><sub>0</sub>), the height at which barriers were fixed (<i>h</i>), and the radius of the barrier gates (<i>r</i><sub>0</sub>).
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数据链接：
https://figshare.com/articles/dataset/Mean_values_for_the_parameters_defining_simulated_5-gates_devices_Height_of_the_potential_profile_i_V_i_sub_0_sub_at_the_gate_position_i_x_i_sub_0_sub_the_height_at_which_barriers_were_fixed_i_h_i_and_the_radius_of_the_barrier_gates_i_r_i_sub_0_sub_/7220954数据链接链接失效反馈
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资源简介：
The device size along x-axis is 120 nm, with the center positioned at x0 = 0 nm.
创建时间：
2018-10-17
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