Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide
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https://repod.icm.edu.pl/citation?persistentId=doi:10.18150/UITLRV
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资源简介：
M. Ozga, R. Mroczynski, A. Wolska, M. Klepka, M. Godlewski, B.S. WitkowskiStudies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxideSolid-State Electronics 228 (2025), 109140
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RepOD
创建时间：
2025-07-01
