The data of the article "Pit density reduction for AlN epilayers grown by molecular beam epitaxy using Al modulation method''

The data related to the article "Pit density reduction for AlN epilayers grown by molecular beam epitaxy using Al modulation method" was published in the journal of Chinese Physics B. It contains an Excel file, which is described below:The continuous epitaxy growth encounters significant challenge in controlling the growth mode, either N-rich the or excessive Al-rich growth mode occur. Consequently, it is very difficult to avoid the formation of pits and Al droplets on AlN surface by continuous epitaxy growth method.In this manuscript, we have used the Al modulation epitaxy (AME) growth method, by manipulating the supply time of the Al and nitrogen sources. The pits density dropped from 12 pits/μm² to 1 pit/μm² and the surface roughness reduced from 1.1 nm to 0.3 nm in a 2×2 μm² area for the AME AlN film homoepitaxially grown on an AlN template. The homo-epitaxy of AlN results have established a foundation for the subsequent epitaxial growth of complex hetero-structures on an AlN template or a bulk AlN substrate.