Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Name: Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Published: 2018-05-30T14:31:37+08:00

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资源简介：

Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.

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2018-05-30

Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

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