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Data from "Microstructure and mechanical properties of a laser-based directed energy deposited Mo-Si-Ti alloy"

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DataCite Commons2026-02-10 更新2026-05-04 收录
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https://radar.kit.edu/radar/en/dataset/pgppvxcdzrwjn3ns
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Raw data set to "Microstructure and mechanical properties of a laser-based directed energy deposited Mo-Si-Ti alloy". The data sets are labelled according to the figures in the manuscript. DED-v or DED-h refers to the eutectic Mo-20Si-52.8Ti alloy manufactured by DED-LB in the vertical or horizontal direction with respect to the build direction AC referes to the eutectic Mo-20Si-52.8Ti alloy manufactured by arc melting in as-cast condtion HT refers to the eutectic Mo-20Si-52.8Ti alloy manufactured by arc melting in annealed condtion (1600°C/150h) Fig.1a = Scanning electron grayscale micrographs using secondary electron contrast as *.jpg image of powder particles Fig.1b = Cumulative frequency as a function of powder size ad aspect ratio Fig.2a = Scanning electron grayscale micrographs using backscattered electron contrast as *.jpg image of DED-v Fig.2b = Scanning electron grayscale micrographs using backscattered electron contrast as *.jpg image of DED-h Fig.2c = Scanning electron grayscale micrographs using backscattered electron contrast as *.jpg image of AC Fig.2d = Scanning electron grayscale micrographs using backscattered electron contrast as *.jpg image of HT Fig.3 = Color-coded IPF maps of (a) (Mo,Ti,Si) solid solution and (b) (Ti,Mo)5Si3. (c) + (d) Orientation relationship of Mo,Ti,Si) solid solution and (Ti,Mo)5Si3 Fig.4a = True stress as a function of true strain at 900°C for DED-v, AC and HT Fig.4b = 0.2% offset yield strength as a function of testing temperature for DED-v, DED-h, AC and HT Fig.4c = Strain rate dependent 0.2% offset yield strength at 900°C for DED-v, AC and HT Fig.4d = Arrhenius plot at 200MPa for DED-v, AC and HT Fig.5 = Scanning electron grayscale micrographs using backscattered electron contrast as *.jpg image of DED-v after compression strain of 6%
提供机构:
Karlsruhe Institute of Technology
创建时间:
2025-07-07
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