Polarization Doping in a GaN-InN System—Ab Initio Simulation
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https://repod.icm.edu.pl/citation?persistentId=doi:10.18150/UPSSAX
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资源简介：
The file contains total electrostatic potential and relaxed atomic coordinates of a system of InN/GaN/InGaN with liner gradien of composition of indium in InGaN region. It was calculated in 4x4 supercell. The data sets consists also PNG pictures of atomic positions and electronic bands profiles calculated from projected density of states. In *.MAV files there are electrostatic potential. First column is z position in angstroms and in the second column there is a potential in the units of Volts. In *.XSF files there are coordinates of atoms in the units of angstrom. Please look at the web for more information on XSF format.
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RepOD
创建时间：
2023-09-13
