Data underlying the publication: Ferritin Single-Electron Transistor

This data set corresponds to the data underlying the article "A Ferritin Single-Electron Transistor". In this study, we report, for the first time, on single-electron transistors with ferritin particles, characterized at low temperatures. Our approach is based on wide (micron scale) and small (8-25 nm) self-aligned-nano-gaps devices that facilitate the trapping of single ferritin particles. Underneath the gap area a local back gate is placed, which allows the study of the transport properties as a function of gate voltage. The data is in excellent agreement with the Coulomb blockade model, revealing single-electron tunneling as the transport mechanism through them. Additionally, the three-terminal electrical measurements suggest the presence of two separate islands coupled in series or in parallel; information that was not possible to distinguish by using only two-terminal measurements. <br>All data displayed in the Manuscript and in the Supporting Information are stored in the file "raw data.zip", as raw data. The zip file contains two different folders: 1) mainArticle: it contains the raw data used in the manuscript. 2) SI: it has the raw data displayed in the Supporting Information. Each subfolder contains separate ReadMe files. In each of them, the format and different considerations for displaying the data are described.<br>