Data for: "Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy"

This data set consists of confocal Raman maps, electron channelling contrast imaging micrographs, electron backscatter diffraction patterns and maps, cathodoluminescence hyperspectral images acquired on a GaN thin-film. We used these data sets to demonstrate a non-destructive approach to understanding the growth modes of a GaN thin film and simultaneously quantify its residual strains and their effect on optical and electrical properties using correlative scanning electron microscopy techniques and Raman microscopy. Coincident strain maps derived from electron backscatter diffraction, cathodoluminescence and confocal Raman techniques reveal strain variations with similar magnitude and directions, especially in the proximity of dislocations.