Electrical and noise responses of graphene back-gated field-effect transistors enhanced by UV light for organic vapors sensing

Back-gated field-effect transistors with graphene channels (GFETs) were investigated toward organic vapors sensing. Two methods were used for sensing experiments including DC characteristics measurements and fluctuation-enhanced sensing by low-frequency noise studies. The data set consists of raw and modified data on GFET responses to acetonitrile, tetrahydrofuran, chloroform, and acetone - DC and noise responses. The combination of electrical measurements with fluctuation-enhanced sensing enable enhanced vapors detection and underlie mechanisms responsible for surface processes under UV irradiation of graphene channel.