VBi2Te4 dataset underlying the publication: Phase Separation Prevents the Synthesis of VBi2Te4 by Molecular Beam Epitaxy

This dataset contains the collection of experimental data on attempts to deposit VBi2Te4 by molecular beam epitaxy (MBE). The data is published in:Altena M., Jansen T., Tsvetanova M., Brinkman A. Nanomaterials 2023<br>The published data covers samples deposited with different vanadium fluxes during the MBE growth, deposited with the following settings:General:Substrate: (0001)-Al2O3Temp_sub = 150CφBi = 0.0027 Å/sφTe = 0.072 Å/sThickness buffer layer Bi2Te3: 1 nm<br>TJ_VBT01 - φV = 1800 C (temperature of the Knudsen cell)TJ_VBT02 - φV = 1750 CTJ_VBT03 - φV = 1850 CTJ_VBT04 - φV = 1900 CMA_VBT14 - φV = 1800 C, no buffer layer<br>The dataset is a .zip file covering the following data:- XRD data (TJ_VBT01, TJ_VBT02, TJ_VBT03, TJ_VBT04)- STEM + EDX data (MA_VBT14)- RHEED data (TJ_VBT02)- AFM data (TJ_VBT01, TJ_VBT02, TJ_VBT03, TJ_VBT04)<br>

本数据集收录了采用分子束外延（Molecular Beam Epitaxy, MBE）制备VBi₂Te₄的相关实验数据。该数据已发表于：Altena M.、Jansen T.、Tsvetanova M.、Brinkman A.，《Nanomaterials》2023年刊。
所发表的数据覆盖了在分子束外延生长过程中，采用不同钒束流参数制备的样品，具体生长设置如下：
通用参数：
衬底：(0001)-Al₂O₃
衬底温度：150℃
φ_Bi = 0.0027 Å/s
φ_Te = 0.072 Å/s
Bi₂Te₃缓冲层厚度：1 nm

TJ_VBT01 —— 钒源克努森池温度φ_V = 1800℃
TJ_VBT02 —— 钒源克努森池温度φ_V = 1750℃
TJ_VBT03 —— 钒源克努森池温度φ_V = 1850℃
TJ_VBT04 —— 钒源克努森池温度φ_V = 1900℃
MA_VBT14 —— 钒源克努森池温度φ_V = 1800℃，无缓冲层

本数据集为.zip压缩包，涵盖以下实验数据：
- X射线衍射（X-ray Diffraction, XRD）数据（对应样品TJ_VBT01、TJ_VBT02、TJ_VBT03、TJ_VBT04）
- 扫描透射电子显微镜（Scanning Transmission Electron Microscopy, STEM）与能量色散X射线光谱（Energy Dispersive X-ray Spectroscopy, EDX）联用数据（对应样品MA_VBT14）
- 反射高能电子衍射（Reflection High-Energy Electron Diffraction, RHEED）数据（对应样品TJ_VBT02）
- 原子力显微镜（Atomic Force Microscopy, AFM）数据（对应样品TJ_VBT01、TJ_VBT02、TJ_VBT03、TJ_VBT04）