Experimental test dataset of two trench MOSFET devices under Kr ion irradiation.
收藏DataCite Commons2026-03-26 更新2026-05-05 收录
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https://www.scidb.cn/detail?dataSetId=367972ec65ef4e51a56d61c869e5fc64
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资源简介：
This article provides the dataset accompanying the paper titled " Comparative Study of Single-Event Leakage Current Effects in Double-Trench and Asymmetric-Trench SiC MOSFETs Under 84Kr Heavy-Ion Irradiation". The dataset includes the experimental test data for two trench devices under 84Kr ion irradiation, corresponding to Fig. 2 to 6 in the paper, and is intended to support the reproduction of the results presented in these figures.
提供机构：
Science Data Bank
创建时间：
2026-03-26
