Data for paper: InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product

The files correspond to experimental results in paper (accepted by Optics Express): “InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product” DOI: 10.1364/OE.24.024242. There are two groups of files: -.PNG/BMP, which corresponds to the figures -.CSV, which are raw data in figures The work in this paper mainly focus on the development of gain-bandwidth product APDsby using novel avalanche material. We demonstrate an InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is applicable to future optical communication systems at or above 10 Gb/s. The data consists of results from InGaAs/AlGaAsSb avalanche photodiodes: dark current, photocurrent, frequency response and gain-bandwidth product. More details about these data/figures can be found in README file.本数据集对应于由Optics Express收录的论文（DOI: 10.1364/OE.24.024242）中的实验结果：《具有高增益-带宽积的InGaAs/AlGaAsSb雪崩光电二极管》。数据分为两组：PNG/BMP格式的文件，对应于论文中的图表；CSV格式的文件，包含了图表中的原始数据。论文主要聚焦于通过使用新型雪崩材料开发具有高增益-带宽积的APD（雪崩光电二极管）。论文展示了在InP衬底上生长的InGaAs/AlGaAsSb APD，其GBP（增益-带宽积）达到424 GHz，是目前报道的InP兼容APD中的最高值，适用于未来10 Gb/s或更高速率的光通信系统。数据集包含InGaAs/AlGaAsSb雪崩光电二极管的暗电流、光电流、频率响应和增益-带宽积等结果。关于这些数据/图表的更多详细信息，请参阅README文件。