Patent AT-E401667-T1: [Translated] METHOD FOR MAKING A TRANSISTOR WITH SELF-ADJUSTED DOUBLE GATES BY SHRINKING THE GATE STRUCTURE
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The production of a microelectronic device with a double grid structure for a transistor comprises forming a stack, an anisotropic etching of the stack by masking on...
一种应用于晶体管的双栅结构微电子器件的制备流程包含制备堆叠层（stack），以及通过掩模（masking）对该堆叠层开展各向异性刻蚀（anisotropic etching）……
