JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs
收藏DataCite Commons2024-10-31 更新2025-04-16 收录
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https://etsin.fairdata.fi/dataset/a4d83f52-5c0d-4d3e-ba84-215dd3d258c6
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资源简介：
This dataset contains data of Xe-126 irradiation tests of 2nd gen. SiC MOSFETs (CPM2-1200-0080B) at different temperatures. Temperature dependence of leakage current degradation was observed.
提供机构：
University of Jyväskylä
创建时间：
2024-10-30
