Data from: Thin Al1-xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown

When using avalanche photodiodes (APDs) in applications, temperature
dependence of avalanche breakdown voltage is one of the performance
parameters to be considered. Hence, novel materials developed for APDs
require dedicated experimental studies. We have carried out such a study
on thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition from 0 to
0.15), plus measurements of avalanche gain and dark current. Based on data
obtained from 77 to 297 K, the alloys Al1−xGaxAs0.56Sb0.44 exhibited weak
temperature dependence of avalanche gain and breakdown voltage, with
temperature coefficient approximately 0.86–1.08 mV K−1, among the lowest
values reported for a number of semiconductor materials. Considering no
significant tunnelling current was observed at room temperature at typical
operating conditions, the alloys Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15)
are suitable for InP substrates-based APDs that require excellent
temperature stability without high tunnelling current.