Tilted fluctuation electron microscopy data from simulated and deposited amorphous Ta

These datasets were used to compare fluctuation electron microscopy analysis methods on simulated and sputter deposited amorphous tantalum. The Ta is 8 nm thick in both the simulated and deposited samples. The deposited Ta is sandwiched between two layers of amorphous 10 nm-thick SiNx. Data are also provided for SiNx deposited on SiNx.

Deposited Ta FEM patterns were collected on a TitanX at 200 kV with a convergence angle of 0.51 mrad and a camera length of 300 mm. Simulated Ta FEM patterns were generated using the Prismatic STEM simulation software (see references).

The samples were tilted between 0o and 45o in 15o increments. 

Deposited Ta: 

.dm4 (Gatan DigitalMicrograph) files are provided with the raw scanning nanodiffraction data for each tilt angle

.png images of the mean CBED pattern for each tilt angle are provided

Simulated Ta:

.h5, .xyz (atomic coordinates), and .txt (Prismatic input parameters defined) files are provided with the raw scanning nanodiffraction data for each tilt angle

.png images of the mean CBED pattern for each tilt angle are provided

The atomic coordinates for the simulated Ta were provided by Jun Ding. Simulated FEM patterns were produced by Luis Rangel DaCosta using Prismatic STEM simulation software. Neal Reynolds grew the experimental Ta and SiNx thin films.