3D Investigation of Structural Defects in Cz-grown β-Ga₂O₃Single Crystals by Dark Field X-ray Microscopy

β-Ga₂O₃ is an emerging ultra-wide bandgap semiconductor with significant potential for high-power electronics and optoelectronics. However, crystalline defects such as dislocations and stacking faults in grown wafers limit the device performance. In this study, we will employ dark-field X-ray microscopy at ID03, ESRF, to achieve high-resolution, non-destructive 3D characterization of defect structures in β-Ga₂O₃ crystals grown by the Czochralski method. By mapping the strain fields around these defects, we aim to classify them and analyze their interactions, particularly with respect to dislocation formation and propagation. Understanding these mechanisms is essential for refining crystal growth processes to minimize defect density, especially during seeding and diameter expansion. Our results will contribute to the advancement of β-Ga₂O₃ for next-generation power electronics.