Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP

The files in this repository correspond to the results shown in the paper, "Modeling Temperature dependent Avalanche Characteristics of InP" published in the IEEE Journal of Lightwave Technology.The .png files are the figures as in the paper and the .csv and .txt files contain the raw data used to create these figures. The raw probability density data is available in the folders, where the electron data is available in the "electron" folder and the "hole" data is available in the hole folder, each folder is subdivided by temperature.The naming convention of the raw probability density files is "electric field(kV/cm)"_"e(electron) or h(hole)"_pdf.txtThis paper focuses on a simple monte carlo model for Indium Phosphide avalanche diodes capable of predicting the temperature dependent avalanche gain, and corresponding impact ionization coefficients.

本存储库中的文件对应于发表在《IEEE 光波技术杂志》上的论文《模拟 InP 温度依赖性雪崩特性的模型》中展示的结果。其中 .png 文件包含论文中的图示，而 .csv 和 .txt 文件则包含了用于生成这些图示的原始数据。原始概率密度数据存储在相应的文件夹中，其中电子数据存放在“electron”文件夹，空穴数据存放在“hole”文件夹，每个文件夹根据温度进一步细分。原始概率密度文件的命名规范为“电场（kV/cm）_e（电子）或 h（空穴）_pdf.txt”。该论文聚焦于一个针对 Indium Phosphide 雪崩二极管的简单蒙特卡洛模型，该模型能够预测温度依赖性的雪崩增益及其相应的电离系数。