Summary of Reported Thermal Atomic Layer Etching Processes by Material and Reactants

This comparison, based on Table 3 of “Thermal Atomic Layer Etching: A Review” (J. Vac. Sci. Technol. A 39, 030801 (2021)) https://doi.org/10.1116/6.0000894, lists all known ALE studies organized by the material etched and the reactants employed in each step. It provides an overview of modification and removal chemistries, process types (two-step or multi-step), and corresponding literature references. The table covers a wide range of materials—including metal oxides, metals, nitrides, semiconductors, and their oxides—showing the diversity of thermal ALE mechanisms such as fluorination, ligand-exchange, conversion, and oxidation-reduction. This structured summary serves as a benchmark for identifying effective precursor combinations and understanding cross-material trends in isotropic ALE chemistry.