Supporting data for All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy

In this repository you will find the data accompanying the publication: “All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy”, by Aberl et al. It describes the fabrication and characterization of Si based color centers using only epitaxial methods. It describes the photoluminescence data of various G’-center, W-center and T-center samples, C-concentration dependent PL data, layer thickness-dependent PL data as well as data correlating normalized intensities, emission wavelengths and full-width at half-maximum of G’-center zero phonon lines with respect to C-content and Si:C layer thickness.