The transformation of digital to analog resistance switching behavior in Bi₂FeCrO₆ thin films

Bi₂FeCrO₆ (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two types of the resistive switching behaviors, it is found that the digital resistive behavior conductance mechanism is a bulk-limited conduction, and the analog resistive switching behavior is accompanied with rectification effects and negative differential resistance behaviors, which are considered as interface-limited conductivity behaviors. So the change of digital and analog resistive switching behaviors may be result of the transformation of conductive mechanism. These research results will help us to design and manufacture digital and analog multifunctional resistive switching memory devices.Bi₂FeCrO₆（简称BFCO）薄膜通过溶胶-凝胶法制备而成。在Au/BFCO/FTO/玻璃结构中，施加连续循环电压后可依次观测到数字型与模拟型两类阻变行为。通过分析两种阻变行为的形成机制，研究发现数字型阻变行为的导电机理为体限域传导（bulk-limited conduction）；模拟型阻变行为伴随整流效应与负微分电阻行为，此类特性被归为界面限域传导。由此推测，数字型与模拟型阻变行为的转变可能源于导电机理的转换。本研究成果将助力数字型与模拟型多功能阻变存储器件的设计与制造。