Measurements, simulations, and models of the point-spread function of electron-beam lithography
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Measured radii of holes from single-shot e-beam exposures at 150 kV, on a stack comprising 180 nm AR-P 6200 on silicon or indium phosphide substrates. Monte Carlo simulations of deposited dose distributions on identical material stacks at 5 kV to 150 kV. Corresponding model fits of the power-law plus Gaussian model.
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2025-06-26



