S3DXRD and 3DXRD for characterizing p-n junction of polycrystalline silicon solar cells

To make polycrystalline silicon solar cell technology cheaper, we need to solve two main challenges, A) Understand the movement dynamics of charge carriers through the grain boundaries and B) Reduce the effect of increasing temperature on efficiencies. Scanning 3DXRD with its developments in recent years has shown to be a reliable technique to study grain boundaries in 3D. In this experimental proposal, we want to map the p-n junction boundary of a polycrystalline silicon solar cell and understand how it changes as a function of misorientation between grains which lie along the p-n junction and temperature.