Data for: Effects of Ultraviolet Wavelength and Intensity on AlGaN Thin Film Surfaces Irradiated Simultaneously with CF4 Plasma and Ultraviolet

Fig. 2. Comparison between Al0.24Ga0.76N band-gap energy and energy spectra of photons emitted from 280- and 310-nm LEDs. The energy spectrum of photons emitted from a blacklight lamp is also drawn in the same figure [22]. Fig. 3. Comparison between F/Ga, N/Ga, and Al/Ga ratios of the as-grown AlGaN surface and the AlGaN surface irradiated for 5 min with CF4 plasma only. Fig. 4. (a) F/Ga, (b) N/Ga, and (c) Al/Ga ratios of AlGaN surfaces irradiated simultaneously with CF4 plasma and UV at wavelengths of 280 and 310 nm, as a function of UV intensity. The results at an UV intensity of 0 mW/cm2 correspond to those caused by CF4 plasma-only irradiation. Fig. 5. F 1s regions in XPS spectra of AlGaN surfaces irradiated simultaneously with CF4 and UV at wavelengths of (a) 280 and (b) 310 nm. The results at an UV intensity of 0 mW/cm2 correspond to those caused by CF4 plasma-only irradiation. Fig. 6. Comparison between CFx fractions of the surfaces irradiated simultaneously with CF4 and UV at wavelengths of 280 and 310 nm, as a function of UV intensity. The result at an UV intensity of 0 mW/cm2 correspond to those caused by CF4 plasma-only irradiation. Fig. 7. (a) An AFM image and (b) a height profile along a straight green line of AlGaN surface irradiated simultaneously with CF4 plasma and 280 nm-UV at 3 mW/cm2.图2 对比了Al₀.₂₄Ga₀.₇₆N的禁带宽度与280 nm和310 nm发光二极管（LED, Light Emitting Diode）发射光子的能谱。本图同时绘制了黑光灯发射的光子能谱[22]。图3 对比了原生生长AlGaN表面，以及仅经CF₄等离子体辐照5 min的AlGaN表面的F/Ga、N/Ga与Al/Ga原子比。图4 (a)、(b)、(c)分别为280 nm与310 nm波长的紫外光（UV, Ultraviolet）与CF₄等离子体协同辐照的AlGaN表面的F/Ga、N/Ga及Al/Ga原子比随紫外光强度的变化关系。紫外光强度为0 mW/cm²时的结果，对应仅经CF₄等离子体辐照的样品。图5 为280 nm(a)与310 nm(b)波长的紫外光与CF₄等离子体协同辐照的AlGaN表面的X射线光电子能谱（XPS, X-ray Photoelectron Spectroscopy）F 1s特征区域谱。紫外光强度为0 mW/cm²时的结果，对应仅经CF₄等离子体辐照的样品。图6 对比了280 nm与310 nm波长的紫外光与CF₄等离子体协同辐照的AlGaN表面的CFₓ组分占比随紫外光强度的变化关系。紫外光强度为0 mW/cm²时的结果，对应仅经CF₄等离子体辐照的样品。图7 (a)为经3 mW/cm²的280 nm紫外光与CF₄等离子体协同辐照的AlGaN表面的原子力显微镜（AFM, Atomic Force Microscopy）图像，(b)为沿图中绿色直线的高度轮廓曲线。