Effects of OH and Cl Impurities on the Optical and Radiation-Resistant Properties of High-Purity Silica Glass - Dataset

This dataset is derived from a systematic experimental study in the paper "Effects of OH and Cl Impurities on the Optical Properties and Radiation Resistance of Quartz Glass", aimed at elucidating the mechanism of the influence of hydroxyl (OH) and chlorine (Cl) impurities on the optical properties and radiation resistance of high-purity quartz glass. The data generation process is centered around five types of high-purity quartz glass samples with clear characteristics (low chlorine high hydroxyl S1, low chlorine medium hydroxyl S2, low chlorine no hydroxyl S3, high chlorine no hydroxyl S4, and no chlorine no hydroxyl 7979). All samples are pre annealed at 1000 ℃ for 20 hours to unify their assumed temperature and eliminate interference from residual hydrogen molecules. The dataset covers comprehensive characterization of samples before and after annealing and irradiation: Fourier transform infrared spectroscopy (FTIR) was used to measure OH content and hypothetical temperature, micro Raman spectrometer (532 nm laser) was used to analyze hydrogen molecule content, waveguide prism coupling instrument was used to measure refractive index at 633 nm wavelength, Metrolux ML 6500 VUV and Perkin Elmer 950 UV/VIS/NIR spectrophotometers were used to obtain vacuum ultraviolet (115-230 nm) and ultraviolet visible (190-800 nm) transmission spectra, FLSP1000 fluorescence spectrometer was used to record emission spectra, excitation spectra, and fluorescence lifetime, Bruker E580 ELEXSYS spectrometer was used for low-temperature (100 K) continuous wave electron paramagnetic resonance (CW-EPR) testing to identify. paramagnetic defects. All samples were subsequently irradiated with a total dose of 100 KGy (dose rate of 5 KGy/h) using a 60Co gamma ray source, and the aforementioned optical tests were repeated to obtain data on radiation-induced absorption spectra (RIA) and other changes. Key data processing includes Gaussian peak splitting of RIA spectra to quantify the concentration of different color center defects (such as Si-E ', NBOHC, POR, ODC (II), B2), single exponential fitting of fluorescence decay curves to obtain defect luminescence lifetime, and calculation of total paramagnetic defect concentration using Spincount software for EPR spectra. The dataset mainly includes the basic parameter table of the samples (recording the OH/Cl content and hypothetical temperature of 5 samples, etc.), raw and processed data of various spectra, defect concentration statistics, and defect structure and bond energy parameter tables.