Demonstration of polycrystalline thin film coatings on glass for spin Seebeck energy harvesting - dataset

Zip file with all raw XRD, XRR, transport data.Origin project(s) containing raw and processed data for related publication. Figure 1 was schematic only and not included here.Figure 2 and Figure S2 are in the same origin project (simple and extended TEM data). Figure captions:Figure 2 TEM analysis of SSE5a. a) & b) STEM/BF and HAADF images of the thin film, respectively. c) Conventional HREM of the PM Pt layer. d) EDX line-scan performed perpendicular to the interfaces of the layers.Figure 3 Summary of the magnetic, electric and thermal properties. a) Spin Seebeck voltage, VISHE (symbols), as a function of applied magnetic field plotted alongside magnetic data (line). b) Resistivity of the devices as a function of tPM. c) Normalised spin Seebeck voltage, SSSE, as a function of tPM, plotted alongside simulated SSSE (θSH = 0.1, λSD = 2 nm, Ms = 90 Am2/kg, D = 71x1041 Jm2[19], gr = 1,3 & 5x1018 m-2[20]). d) Definition of the parameters used to describe heat flow, (e) & (f) Change in ΔT2, and SSSE with substrate's thermal conductivity, κ3.Figure S1 Characterisation of the Fe3O4 film. a) SQUID magnetometry above and below the Verwey transition, TV. b) Resistivity as a function of temperature. c) XRD of a set of 4 separately prepared Fe3O4 films. The inset shows a close-up of the (311), (222) peaks. d) Example XRR data (symbols) and fit (solid line), indicating thickness = 79 nm, roughness = 1.5 nm.Figure S2 TEM analysis of SSE5a. a) & b) STEM/BF and HAADF images of the thin film, respectively. c) Conventional HREM of the PM Pt layer. d) & e) STEM/BF image of the thin film stack and corresponding EDX line-scan performed perpendicular to the interfaces of the layers, respectively, and f) schematic of the grain growth described in the text.Figure S3 Characteristics of the bilayer film. a) XRD of SSE5a (2.5 nm Pt) and SSE20a (7.3 nm Pt). Inset shows a close-up of the Pt peak. b) XRR fit of SSE5a; Pt thickness = 2.5 nm, roughness = 2 nm.Figure S4 Example spin Seebeck measurement for SSE7a (tPM = 3.2 nm) measured in fixed field as a function of temperature difference. Note that the sign convention for measurements, defined in Fig 1(a) of the main manuscript follows from Uchida et al.[6].包含所有原始X射线衍射（XRD）、X射线反射率（XRR）及输运测试数据的压缩归档文件。本数据集源自相关发表论文所用的、包含原始与经处理实验数据的项目。图1仅为示意图，未包含于本数据集中。 图2与图S2同属一个源项目，包含简易与扩展型透射电子显微镜（TEM）测试数据。 图注如下： 图2 SSE5a的透射电镜分析。a)、b)分别为薄膜的扫描透射明场（STEM/BF）与高角环形暗场（HAADF）图像；c) PM Pt层的常规高分辨电子显微（HREM）图像；d) 垂直于各层界面开展的能量色散X射线光谱（EDX）线扫分析。 图3 磁学、电学与热学性能汇总。a) 自旋塞贝克电压V_ISHE（符号标注）随外加磁场的变化曲线，同时附带磁学测试数据（折线）；b) 器件电阻率随PM层厚度t_PM的变化关系；c) 归一化自旋塞贝克电压S_SSE随t_PM的变化，同时附带模拟得到的S_SSE曲线（参数设置：θ_SH=0.1，λ_SD=2 nm，M_s=90 Am²/kg，D=71×10⁴¹ J·m²[19]，g_r=1、3及5×10¹⁸ m⁻²[20]）；d) 用于描述热流过程的参数定义；(e)、(f) 分别为ΔT₂以及S_SSE随衬底热导率κ₃的变化情况。 图S1 Fe₃O₄薄膜的表征。a) 维尔威转变（Verwey transition）温度上下的超导量子干涉仪（SQUID）磁测量结果；b) 电阻率随温度的变化曲线；c) 4组独立制备的Fe₃O₄薄膜的XRD图谱，内嵌图为(311)、(222)衍射峰的放大细节；d) 示例XRR测试数据（符号）与拟合曲线（实线），结果显示薄膜厚度为79 nm，界面粗糙度为1.5 nm。 图S2 SSE5a的透射电镜分析。a)、b)分别为薄膜的STEM/BF与HAADF图像；c) PM Pt层的常规HREM图像；d)、e)分别为薄膜叠层的STEM/BF图像以及垂直于各层界面的EDX线扫结果；f) 正文所述晶粒生长过程的示意图。 图S3 双层薄膜的特性表征。a) SSE5a（Pt层厚度2.5 nm）与SSE20a（Pt层厚度7.3 nm）的XRD图谱，内嵌图为Pt衍射峰的放大细节；b) SSE5a的XRR拟合结果：Pt层厚度为2.5 nm，界面粗糙度为2 nm。 图S4 SSE7a（t_PM=3.2 nm）的示例自旋塞贝克测试结果，测试时固定磁场，随温度差变化。需注意本测试的符号约定遵循主稿件图1(a)中的定义，源自Uchida等人[6]的研究。