Replication Data for: Scalable production of solid-immersion lenses for quantum emitters in silicon carbide

Data to replicate the experimental data plots in the paper: Fig. 1d, e: AFM scans of SIL before the etching and after the etching, possibility to see how the mask changed in the etching process; Fig. 2a, b, c: Confoscal scan of the all SIL, g2 measurements of one defect inside the sils and relative ODMR measurements related to Vsi in SiC in the SIL; Fig. 3a, b: statistics of centers inside the sils according to the enhancement, maximum enhancement reached for one center inside the SIL compared to the one outside

数据集旨在复现论文中的实验数据图表：图1d、e：在刻蚀前后的SIL原子力显微镜扫描，可观察刻蚀过程中掩模的变化情况；图2a、b、c：SIL整体的Confoscal扫描，sils内部单个缺陷的g2测量以及与SiC中Vsi相关的相对ODMR测量；图3a、b：根据增强效果对sils内部中心的统计数据，与SIL外部相比，SIL内部单个中心的最大增强效果。