STEM (TIFF), Raman and PL spectra (TXT) for: In Situ Raman Study on Sulfur Vacancies in Monolayer MoS₂

Datasets containing STEM images (TIFF) and Raman/photoluminescence spectra (TXT) of CVD-grown monolayer MoS₂ on Si/SiO₂ (285 nm). The sample is irradiated with Ar⁺ ions and characterized by in situ Raman spectroscopy under UHV to identify Raman fingerprints of sulfur-vacancy ensembles and to separate intrinsic defect effects from adsorbate-induced doping. Raman and PL spectra are provided for pristine material and Raman spectra after irradiation steps of 1×10¹³, 5×10¹³, and 1×10¹⁴ 1/cm². A reference sample irradiated with 600 eV Ar⁺ to 5×10¹³ 1/cm² is used for atomic-resolution STEM/MAADF characterization of vacancy-type defects.