碳化硅 MOSFET 和 IGBT 器件设计仿真及制备数据集

6500V50A SiC 二极管测试数据主要包含6500V/50A SiC 二极管图片和第三方测试数据文件，在数据文件中可以查询6500V/50A SiC 二极管常高温下的正向电流、反向泄漏电流测试结果。6500V25A SiC MOSFET测试数据主要包含6500V/25A SiC MOSFET图片和第三方测试数据文件，在数据文件中可以查询6.5kV SiC MOSFET常高温下的阈值电压、栅极泄漏电流、漏极泄漏电流、导通压降测试结果。15kV SiC IGBT芯片测试数据主要包含15kV SiC IGBT芯片图片和第三方测试数据文件，在数据文件中可以查询15kV SiC IGBT芯片常温下的集电极-发射机泄漏电流测试结果。3300V50A SiC 二极管测试数据，数据项主要包含3300V/50A SiC 二极管图片和第三方测试数据文件，在数据文件中可以查询3300V/50A SiC 二极管常高温下的正向电流、反向泄漏电流测试结果。3300V SiC MOSFET与SBD测试数据主要包含3300V/25A SiC MOSFET和3300V/50A SiC 二极管图片和第三方测试数据文件，在数据文件中可以查询3300V/50A SiC 二极管常高温下的正向电流、反向泄漏电流测试结果；6.5kV SiC MOSFET常高温下的阈值电压、栅极泄漏电流、漏极泄漏电流、导通压降测试结果。3300V25A SiC MOSFET测试数据主要包含3300V/25A SiC MOSFET图片和第三方测试数据文件，在数据文件中可以查询3.3kV SiC MOSFET常高温下的阈值电压、栅极泄漏电流、漏极泄漏电流、导通压降测试结果。结构仿真数据，数据项主要包含SiC MOSFET结构仿真文件，在数据文件中可以查询结构数据。The test data for 6500V/50A SiC diodes mainly includes images of 6500V/50A SiC diodes and third-party test data files. Users can query the test results of forward current and reverse leakage current of 6500V/50A SiC diodes under ambient and elevated temperatures from these data files. The test data for 6500V/25A SiC MOSFETs mainly includes images of 6500V/25A SiC MOSFETs and third-party test data files. Users can query the test results of threshold voltage, gate leakage current, drain leakage current, and on-state voltage drop of 6.5kV SiC MOSFETs under ambient and elevated temperatures from these data files. The test data for 15kV SiC IGBT chips mainly includes images of 15kV SiC IGBT chips and third-party test data files. Users can query the test results of collector-emitter leakage current of 15kV SiC IGBT chips under ambient temperature from these data files. The test data for 3300V/50A SiC diodes mainly includes images of 3300V/50A SiC diodes and third-party test data files. Users can query the test results of forward current and reverse leakage current of 3300V/50A SiC diodes under ambient and elevated temperatures from these data files. The test data for 3300V SiC MOSFETs and SBDs mainly includes images of 3300V/25A SiC MOSFETs and 3300V/50A SiC diodes, as well as third-party test data files. Users can query the test results of forward current and reverse leakage current of 3300V/50A SiC diodes under ambient and elevated temperatures, as well as the test results of threshold voltage, gate leakage current, drain leakage current, and on-state voltage drop of 6.5kV SiC MOSFETs under ambient and elevated temperatures from these data files. The test data for 3300V/25A SiC MOSFETs mainly includes images of 3300V/25A SiC MOSFETs and third-party test data files. Users can query the test results of threshold voltage, gate leakage current, drain leakage current, and on-state voltage drop of 3.3kV SiC MOSFETs under ambient and elevated temperatures from these data files. The structural simulation data mainly includes SiC MOSFET structural simulation files, and users can query structural data from these data files.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于碳化硅（SiC）MOSFET和IGBT器件，提供了多种电压和电流规格器件的测试数据，包括正向电流、反向泄漏电流、阈值电压等关键参数。同时，数据集还包含结构仿真文件，用于支持器件设计和仿真分析。