Temperature-Dependent Study of the Electronic Structure in Kagome Material Ni3In2S2
收藏DataCite Commons2026-01-21 更新2026-02-08 收录
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https://data.cells.es/doi/10.57710/ALBA-ES-20250340383
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资源简介:
Ni₃In₂S₂, a kagome lattice material, exhibits exceptionally high carrier mobility and extreme magnetoresistance (XMR), yet no long-range magnetic order has been observed. Notably, its XMR effect and Hall resistivity behavior undergo a transition around 50 K, but the underlying electronic origins remain unclear. Angle-resolved photoemission spectroscopy (ARPES) studies suggest that compensated electronic bands and a Dirac nodal point near the Fermi level may play a crucial role in these transport properties. However, no temperature-dependent ARPES investigation has been conducted. This experiment aims to probe the temperature evolution of Ni₃In₂S₂’s electronic structure to elucidate the mechanisms driving its anomalous magnetotransport behavior.
提供机构:
ALBA Synchrotron
创建时间:
2026-01-21



