Correlation of structural and electrical defects by scanning X-ray nanoprobe
收藏ESRF Portal2028-01-01 更新2026-04-23 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2261134045
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资源简介：
We will measure XBIC and SXDM on a HEMT device before and after HTRB stressing to observe the evolution of electrically active defects and correlate them to structural changes in the sample. A lock-in amplifier coupled to an optical chopper will allow for XBC measurements with finer sensitivity than achieved previoulsy
提供机构：
University of Twente, Faculty of Science & Technology, Postbus 217, 7500 AE, Enschede, NETHERLANDS; ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; ESRF, 71 avenue des Martyrs CS 40220, 38043, Grenoble, FR
创建时间：
2028-01-01
