Recombination processes in intrinsic and p-doped low-threshold 1.3 µm InAs-based quantum dot lasers on silicon
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Data for the paper with the following abstract. On-chip lasers are a key component for the realization of silicon photonics. The performance of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native substrates. To drive forward design optimization we investigated the temperature and pressure dependence of intrinsic and modulation p-doped 1.3 μm InAs dot-in-well (DWELL) laser diodes on on-axis silicon substrates for comparison with devices on GaAs substrates. The silicon-based devices demonstrated low room temperature (RT) threshold current densities (<em>J<sub>th</sub></em>) of 192 Acm<sup>-2</sup> (538 Acm<sup>-2</sup>) intrinsic (p-doped). Intrinsic devices exhibited temperature stable operation from 170-200 K. Above this, <em>J<sub>th</sub></em> increased more rapidly due to increased non-radiative recombination. P-doping increased the temperature at which <em>J<sub>th</sub>(T)</em> started to increase to 300 K with a temperature insensitive region close to RT, but with a higher <em>J<sub>th</sub></em>. A strong correlation was found between the temperature dependence of gain spectrum broadening and the radiative component of threshold <em>J<sub>rad</sub>(T)</em>. At low temperature this is consistent with strong inhomogeneous broadening of the carrier distribution, which is more pronounced in the p-doped devices. At higher temperatures <em>J<sub>th</sub></em> increases due to homogeneous thermal broadening coupled with non-radiative recombination. Hydrostatic pressure investigations indicate that while defect-related recombination dominates, radiative and Auger recombination also contribute to <em>J<sub>th</sub></em>.
