DGFET Data
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资源简介：
The data set of a double gate FET of spatially varying quantities namely electrostatic potential (i.e. solution of the Poisson equation), quantum corrected equilibrium electron concentration, wavefunctions (solution of the effective mass Schrodinger equation), and eigen energies (solution of the effective mass Schrodinger equation). The data is obtained by varying gate biases from 0 V to 0.6 V (assuming the threshold voltage is 0.3 V) and the channel thickness is varied from 3 nm to 40 nm. The data is obtained by self-consistent solution of the Schrodinger, Poisson, and equilibrium carrier statistics using Finite Difference Method. THe tolerance criteria for the self-consistency was set to 0.5 mV
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IEEE DataPort创建时间：
2025-01-31
