MoS2 based devices characteristics
收藏DataCite Commons2025-03-14 更新2025-04-16 收录
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https://repod.icm.edu.pl/citation?persistentId=doi:10.18150/AHFBLV
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资源简介：
The MoS2 2D crystals based devices with six 1 μm wide fingers and back-gate electrode were fabricated on Si/SiO2 substrates by exfoliation and transfer from PDMS gel film. Electrodes, paths and pads were formed of Bi/Au (20/80 nm) evaporated in UHV system. I-V characteristics for various electrode distances (1-9 μm), gate voltage (0-24 V) and temperature (1.5-300 K) of the device were measured and discussed.
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RepOD
创建时间：
2025-03-13
