Interplay between Hall sensitivity, Temperature stability and Frequency response in a 2DEG Nitride Hall Effect Sensor

We investigated the relationship between Hall sensitivity, temperature stability and frequency response of III-nitride two-dimensional electron gas-based Hall effect sensors. For this study, we utilized three different heterostructure designs, each with varying percentages of ‘Al’ content in the (Al)GaN barrier layer. The relationship between Hall sensitivity, temperature stability and frequency response were investigated by varying  the 2DEG carrier mobility, sheet density, and sheet resistance of the Hall device. The investigation demonstrated and explained a tradeoff of Hall sensitivity on the order of 50% to obtain  a sensor with a 16% reduction in sensitivity over the temperature range from room temperature to 377°C with a frequency bandwidth of approximately 5.8 MHz