The luminescence study of Ga1.98–xAlxO3:0.02Cr3+ coumpounds.

A chemical and mechanical pressure-induced photoluminescence tuning method was developed through structural evolution and hydrostatic pressure involving phase transition. A series of Ga1.98−xAlxO3:0.02Cr3+ phosphors were synthesized by collaborators from National Taiwan University. Structural evolution reveals a crystal phase change with the incorporation of Al ions. The luminescent analysis shows the broad-to-sharp emission process with a high internal quantum efficiency value (>90%). The high-pressure study reveals the emission from the exchange-coupled Cr3+ pairs and the phase transition under high pressure. Electron paramagnetic resonance indicates the distortion in the microstructures of the emission center. Finally, an ultra-broadband phosphor-converted light-emitting diode is achieved by utilizing the mixture of Ga1.18Al0.8O3:0.02Cr3+ and Ga1.18Sc0.8O3:0.02Cr3+ phosphors with a bandwidth of 209 nm and output power of 119 mW. This study provides insights into the effect of chemical and mechanical pressure on the Cr3+-doped materials and the development of high-quality near-infrared luminescent materials.
In that dataset, the scientific article with Supporting Information, raw data of excitation and emission spectra, temperature-dependent, and high-pressure dependent photoluminescence and decay profiles, are provided.