Microelectronic Components Charge Density vs. Temperature in Real Time
收藏ESRF Portal2028-01-01 更新2026-04-23 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2049021021
下载链接
链接失效反馈官方服务：
资源简介：
The objective of this proposal is to investigate the temperature dependence of charge density in microelectronic components under the action of pulsed X-ray as an alternative source that induces SEE. The main focus is on understanding how temperature affects charge density, since thermal generation of charge carriers increases with increasing temperature, which leads to an increase in the number of free carriers (electrons and holes) due to excitation from the valence band to the conduction band. Therefore, the number of SEE should increase with increasing temperature and lead to failure of the component.
提供机构：
University of Leiden, Catalysis and Surface Chemistry, Leiden Institute of Chemistry, Po Box 9502, 2300 Ra Leiden, Netherlands; ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; ESRF, 71 avenue des Martyrs CS 40220, 38043, Grenoble, FR
创建时间：
2028-01-01
