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Molecular Memory Switching Device Based on a Tetranuclear Organotin Sulfide Cage [(RSnIV)4(μ-S)6]·2CHCl3·4H2O (R = 2‑(Phenylazo)phenyl): Synthesis, Structure, DFT Studies, and Memristive Behavior

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Figshare2019-12-29 更新2026-04-28 收录
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https://figshare.com/articles/dataset/Molecular_Memory_Switching_Device_Based_on_a_Tetranuclear_Organotin_Sulfide_Cage_RSn_sup_IV_sup_sub_4_sub_-S_sub_6_sub_2CHCl_sub_3_sub_4H_sub_2_sub_O_R_2_Phenylazo_phenyl_Synthesis_Structure_DFT_Studies_and_Memristive_Behavior/11561787
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RSnCl3 (R = 2-phenylazophenyl) on reaction with Na2S·9H2O in a 1:1 mixture of acetone and methanol afforded a tetranuclear monoorganotin sulfide cage [(RSnIV)4(μ-S)6]·2CHCl3·4H2O (R = 2-phenylazophenyl) (1). Complex 1 crystallizes in the monoclinic space group P2/n. The molecular structure of 1 contains five-coordinate tin centers in distorted trigonal bipyramidal geometry. Complex 1 is monoorganotin sulfide derivative having a tetranuclear double-decker cage-like structure. In 1, four tin centers are bridged by a μ2-S unit affording a ubiquitous Sn–S–Sn motif among monoorganotin sulfide compounds. In addition, each tin also has intramolecular coordination to a nitrogen atom of a 2-phenylazophenyl substituent (N → Sn). The DFT calculation suggests that the complex 1 involves mainly ligand based transitions. The complex 1 based device was studied for its electrical behavior and was found to show stable, reproducible memristive behavior with an on–off ratio of 103, which suggests that the complex 1 is a promising material for memory device applications.
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2019-12-29
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