Valence Band Offset–Controlled Transport and Interfacial Recombination Mechanisms in InAs/InAsSb nBn LWIR Detectors
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资源简介:
Kopytko, Malgorzata, 2026, "Valence Band Offset–Controlled Transport and Interfacial Recombination Mechanisms in InAs/InAsSb nBn LWIR Detectors", https://doi.org/10.18150/THHOJE, RepOD, V1
创建时间:
2026-08-11



