Supplementary Material
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https://aip.figshare.com/articles/dataset/Supplementary_Material/27236211/1
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资源简介：
1. Current-voltage I-V characteristic of Ni/ReS2/Ni structure
2. ReS2/Si energy barrier extraction from I-V-T measurements
3. Photoresponse in Ni/Si Schottky diode
4. Responsivity maps as functions of external bias and incident power
5. Photoresponse under switching light at negative bias voltage
6. Transient photovoltage at zero current
7. Nonequilibrium Green's function (NEGF) calculations
8. Equilibrium band diagram of the Ni/Si structure
9. Experimental details
提供机构：
AIP Publishing
创建时间：
2024-10-24
