S1_XPS
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下载链接：
https://figshare.com/articles/dataset/S1_XPS/11722467
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资源简介：
X-ray photoelectron spectroscopy data acquired for epitaxial graphene on silicon carbide intercalated with Ga, In, or Sn.
"All
Elements_O2HeEG_annealed at intercalation conditions" contains spectra
for a sample of epitaxial graphene on silicon carbide (EG/SiC) that was
exposed to a 50W O2/He plasma for 60s and subsequently annealed at 800C,
300 Torr for 30 minutes under 50 sccm Ar.
"All
Elements_O2HeEG_SiC_HOPG_AsGrownEG_HydrogEG_GaIntO2HeEG_GaIntAsGrownEG"
contains spectra for the following samples: O2/He plasma treated
EG/SiC, bare SiC, highly ordered pyrolytic graphite (HOPG), as-grown
EG/SiC, hydrogenated (or hydrogen intercalated) EG/SiC, Ga-intercalated,
O2/He plasma treated EG/SiC, and Ga-intercalated as-grown EG/SiC. This
file contains C 1s, O 1s, Si 2p, Ga 3d, and survey spectra.
"InSnInterc" contains O 1s, Si 2p ,C 1s, Sn 3d and In 3d spectra for Sn and In-intercalated, O2/He plasma treated EG/SiC.
创建时间：
2020-01-29
