Improvement in hole transporting ability and device performance in quantum dot light emitting diodes

We demonstrate a novel approach to improve device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 into poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, the polyethyleneimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer was firstly applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139,909 cd/m2 and current efficiency of 27.2 cd/A were obtained from the optimized device with the configuration of ITO/PEDOT:PSS+BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.