Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors

Advanced quantum transport approach from first-principle to shed light on the influence of orientation misalignments on the performance of BP-based field-effect transistors, for which the input files are reported. Both n-and p-type configurations are investigated for six alignment angles, in the ballistic limit of transport and in the presence of electron-phonon and charged impurity scattering.