The test results of GaN p-i-n avalanche photodiodes grown on GaN substrates
收藏科学数据银行2024-03-25 更新2026-04-23 收录
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资源简介：
The data mainly includes IV testing of devices, current responsiveness testing, and defect emission spectroscopy testing. The IV test includes dark current, photocurrent, and gain. The device simulation results are also included.
提供机构：
Shanghai Institute of Technical Physics
创建时间：
2024-03-23
