The test results of GaN p-i-n avalanche photodiodes grown on GaN substrates

Name: The test results of GaN p-i-n avalanche photodiodes grown on GaN substrates
Creator: Shanghai Institute of Technical Physics
Published: 2024-03-23T00:00:00+08:00

科学数据银行2024-03-25 更新2026-04-23 收录

GaN雪崩光电二极管

器件特性测试

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资源简介：

The data mainly includes IV testing of devices, current responsiveness testing, and defect emission spectroscopy testing. The IV test includes dark current, photocurrent, and gain. The device simulation results are also included.

提供机构：

Shanghai Institute of Technical Physics

创建时间：

2024-03-23

The test results of GaN p-i-n avalanche photodiodes grown on GaN substrates

资源简介：

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