Replication Data for: Single in-situ interface characterization composed of niobium and a selectively grown (Bi1-xSbx)2Te3 topological insulator nanoribbon

With increasing interest in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a s-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in-situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in-situ fabricated Nb/(Bi0.15Sb0.85)2Te3 nano interface. The resulting high interface transparency, is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in-situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.